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Publication . Article . 2017

Predicting synergy in atomic layer etching

Keren J. Kanarik; Samantha Tan; Wenbing Yang; Taeseung Kim; Thorsten Lill; Alexander Kabansky; Eric Hudson; +8 Authors
Open Access
Published: 01 Sep 2017 Journal: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, volume 35, page 05C302 (issn: 0734-2101, eissn: 1520-8559, Copyright policy )
Publisher: American Vacuum Society
Abstract
Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters [J. Appl. Phys. 50, 5 (1979)]. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bu...
Subjects by Vocabulary

Microsoft Academic Graph classification: Tungsten chemistry.chemical_element chemistry Germanium Binding energy Layer (electronics) Etching (microfabrication) Nanotechnology Silicon Surface binding Anisotropy Chemical physics

Subjects

Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics

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